READ: The AT49F040 is a ccessed like an EPROM. The typical number of program and erase cycles is in excess of 10,000 cycles. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The end of a program cycle can be optionally detected by the DATA polling feature. The byte programmi ng time is a fast 50 μs. Reprogramming the AT49F040 is performed by erasing the entire 4 megabits of memory and then programming on a byte by byte basis. Reading data out of the device is similar to reading from an EPROM. Five-volt-only commands determine the read and programming operation of the device. To allow for simple in-system reprogrammability, the AT49F040 does not require high input voltages for programming. When the device is deselected, the CMOS standby current is less than 100 μA. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 90 ns with power dissipation of just 275 mW over the commercial temperature range. Its 4 megabits of memory is organized as 524,288 words by 8 bits. The AT49F040 is a 5-volt-only in-system Flash Memory. ∙ DATA Polling For End Of Program Detection
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